OUR APPROACH: UPGRADING OF TECHNICAL BARRIER

The proposed approach is based on the following assumptions:

• There is no ideal host rock!
  Additionally, most countries will have difficulties to find even near-ideal site conditions on their territory.
• One retention barrier at minimum must keep the long-term integrity!
• Minimize the amount of metals in the repository!

For said reasons, the authors propose the use of pressure less sintered silicon carbide (SSiC) as a supplementary retention barrier.

The ultimate goal is a zero source term.

Our approach includes the following considerations:

• Select the appropriate type of silicon carbide
• Use a sufficient thickness of the SSiC wall
• Find the proper position for the SSiC wall in the multilayer system
• Provide an additional protection layer on the inner surface of SSiC wall.